Product
Graphene
CVD System
I.
PlanarGROW
Graphene CVD Systems
The planarGROW series of
thermal CVD systems for graphene (and CNT growth with minor modifications) is a
horizontal hot-wall reactor system. We offer three standard system
configurations (planarGROW-2B, planarGROW-4S, and planarGROW-6E) as shown in
the table below. However, each of these standard systems can be customized to
the user"s specific application requirements. A more detailed system
specification will be available on request.
planargrow-4S software
Interface
One
of the key benefits of the planarGROW product line is its ease of use via a
fully functional Graphical User Interface (GUI) built around National
Instruments LabVIEW software. This GUI allows full control of each system
parameter, allows the user to load and save custom growth recipes, and enables
�1-click� unattended operation via an auto process feature. The images below
are screenshots of the GUI for a planarGROW-2S system with a high-temperature
furnace and a turbopump, which are offered as options.
Fully
Automated PC Control with LabVIEW
Front End
User-configurable Auto Process Settings
Graphene & CNT Synthesis
References
With over 15 years of use
for carbon nanotube (CNT) and graphene synthesis, the planarGROW product line
has been used to synthesize the graphene with experimental results published in
leading academic journals. For a partial list, please view our References
page. In addition, please view our Installations
page for photo galleries of recent customer installation sites.
Other
2D Materials CVD System
II.
PlanarGROW
h-BN CVD Systems
The
planarGROW series of thermal CVD systems for h-BN is a horizontal hot-wall
reactor system. planarTECH offers a standard 2" system
(planarGROW-2S-BN), whose detailed specs are shown below. However, this
standard system can be customized to the user"s specific application requirements. h-BN
can be grown from either liquid borazine or solid ammonia borane, and this
system supports both precursors. In addition, the system supports dual process
use for both h-BN and graphene.
PlanarGROW-2S-BN Product Spec
Quartz Tube & Furnace
- Tube Dimensions: 2� (?50*1000mm)
- Heater: Kanthal Wire w/ Glass Wool Molding
- Maximum Temperature: 1,100�C
- Heating Zone: 1-zone, ?100*350mm
- Linear Motion Control Unit
Gas Supply Unit
- Four (4) Celerity TN2900 Mass Flow Controllers
* Hydrogen (H2), 100sccm
* Methane (CH4), 200sccm [For Graphene]
* Argon (Ar): 1,000sccm
* Nitrogen (N2): 1,000sccm
- Source Vapor Feeding System w/ Heating Jacket
- Low Temp. Chiller (-10�C) for Borazine Canister
Boron Nitride Synthesis References
With a solid understanding
of the synthesis of monolayer graphene, many researchers have pursued the
synthesis of other 2D materials, such as boron nitride. As with graphene,
planarTECH has a track record of providing systems for this new field of
study. The boron nitride synthesis functionality of the planarGROW-2S-BN
is based on a design by Prof. Ki Kang Kim, now an assistant professor at
DongGuk University in Seoul, Korea. Below is a selection of four (4) of
his recently published papers in which a planarGROW (or similar) system was
used to synthesize the BN used in the work.
References
(Growth on Copper)
1. (2013-02-15) Kim, S.M., et al. �Synthesis of Patched or Stacked Graphene and hBN Flakes: A Route to Hybrid Structure Discovery,� Nano Lett., 2013, 13 (3), pp 933�94 | DOI:10.1021/nl303760m
2. (2012-09-12) Kim, K.K., et al. �Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices,� ACS Nano, 2012, 6 (10), pp 8583�8590 | DOI:10.1021/nn301675f
3. (2011-11-23) Kim, K.K., et al. �Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition,� Nano Lett., 2012, 12 (1), pp 161�166 | DOI:10.1021/nl203249
References
(Growth on Nickel)
1. (2011-09-02) Shi, Y.M., �Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition,� Nano Lett., 2010, 10 (10), pp 4134�4139 | DOI:10.1021/nl1023707
III.
PlanarGROW
MoS2 CVD Systems
The planarGROW series of
thermal CVD systems for MoS2 (and other metal dichalcogenides) is a horizontal
hot-wall reactor system. Unlike graphene, MoS2 is grown from solid sources
(typically sulpher powder and MoO3 powder) and can be directly deposited onto a
target substrate such as SiO2. planarTECH offers a standard 2" system
(planarGROW-2S-MoS2), whose detailed specs are shown below. However, this
standard system can be customized to the user"s specific application
requirements.
PlanarGROW-2S-MoS2
Product Spec
Quartz Tube & Furnace
- Quartz Tube Dimensions: ?50(OD)*1000mm
- Heating Element: Kanthal Wire, Glass Wool Molding
- Maximum Temp: 1,000�C, K-type Thermocouple
- Heating Zone: 2-zones, ?50*300mm Each
- Alumina Tray + Wafer Tray for 10x10mm2 Samples
Gas Supply Unit
- One (1) Celerity TN2900 Mass Flow Controller
* Argon (Ar): 1,000sccm
- Open Mounting Bay for Second (2nd) MFC
